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| FDS8690 N-Channel PowerTrench(R) MOSFET January 2006 FDS8690 N-Channel PowerTrench(R) MOSFET 30V, 14A, 7.6m General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed. Features Max rDS(on) = 7.6m, VGS = 10V, ID = 14A Max rDS(on) = 11.4m, VGS = 4.5V, ID = 11.5A High performance trench technology for extremely low rDS(on) and fast switching Very low gate charge High power and current handling capability 100% RG tested RoHS Compliant LE A REE I DF Applications Notebook CPU power supply Synchronous rectifier M ENTATIO LE N MP Absolute Maximum Ratings TA = 25C unless otherwise Noted Symbol VDS VGS ID EAS PD Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation for Single Operation (Note 3) (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Temperature (Note 1a) Ratings 30 20 14 100 210 2.5 1.2 1.0 -55 to +150 C W Units V V A mJ Thermal Characteristics RJA RJC Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case (Note 1a) (Note 1) 50 25 C/W C/W Package Marking and Ordering Information Device Marking FDS8690 Device FDS8690 Reel Size 13" 1 Tape Width 12mm Quantity 2500 units www.fairchildsemi.com (c)2006 Fairchild Semiconductor Corporation FDS8690 Rev. B FDS8690 N-Channel PowerTrench(R) MOSFET Electrical Characteristics TJ = 25C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250A, VGS = 0V ID = 250A, referenced to 25C VDS = 24V, VGS = 0V VGS = 20V, VDS = 0V 30 34.3 1 100 V mV/C A nA On Characteristics (Note 2) VGS(th) VGS(th) TJ rDS(ON) Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient Drain to Source On Resistance VGS = VDS, ID = 250A ID = 250A, referenced to 25C VGS = 10V, ID = 14A VGS = 4.5V, ID = 11.5A VGS = 10V, ID = 14A, TJ = 125C 1 1.6 - 4.5 6.3 8.6 9.0 7.6 11.4 10.9 m 3 V mV/C Dynamic Characteristics Ciss Coss Crss RG Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = 15V, VGS = 0V, f = 1MHz f = 1MHz 1260 535 80 1.1 1680 715 120 pF pF pF Switching Characteristics (Note 2) td(on) tr td(off) tf Qg Qg Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Total Gate Charge Gate to Source Gate Charge Gate to Drain Charge VDS = 15V, VGS = 10V ID = 14A VDS = 15V, VGS = 5V ID = 14A VDS = 15V, ID = 1A, VGS = 10V, RGS = 6 8.0 1.8 26 19 18.8 10 3.5 2.9 16 10 42 35 27 14 ns ns ns ns nC nC nC nC Drain-Source Diode Characteristics VSD trr Qrr Source to Drain Diode Forward Voltage VGS = 0V, IS = 2.1A Reverse Recovery Time Reverse Recovery Charge IF = 14A, di/dt = 100A/s IF = 14A, di/dt = 100A/s 0.7 1.2 45 33 V ns nC Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 50C/W when mounted on a 1 in2 pad of 2 oz copper b)105C/W when mounted on a .04 in2 pad of 2 oz copper c) 125C/W when mounted on a minimun pad 2. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. 3. Starting TJ = 25oC, L = 3mH, IAS = 11.8A , VDD = 24V, VGS = 10V. 2 FDS8690 Rev. B www.fairchildsemi.com FDS8690 N-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted 100 VGS = 4V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 3.2 2.8 2.4 2.0 VGS = 4V VGS = 3.0V ID, DRAIN CURRENT (A) 80 VGS = 4.5V VGS = 3.5V PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX VGS = 3.5V 60 40 20 0 VGS = 10V VGS = 3V 1.6 1.2 0.8 VGS = 10V VGS = 4.5V PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX 0 1 2 3 VDS, DRAIN TO SOURCE VOLTAGE (V) 4 0 20 40 60 ID, DRAIN CURRENT(A) 80 100 Figure 1. On Region Characteristics Figure 2. Normal On-Resistance vs Drain Current and Gate Voltage 60 rDS(on), DRAIN TO SOURCE ON-RESISTANCE (m) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.6 1.4 1.2 1.0 0.8 0.6 -80 ID = 14A VGS = 10V ID = 50A 50 40 30 20 10 0 TJ = 25oC PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX TJ = 150oC -40 0 40 80 120 TJ, JUNCTION TEMPERATURE (oC) 160 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 3. Normalized On Resistance vs Junction Temperature 100 ID, DRAIN CURRENT (A) 80 60 40 20 0 1.0 TJ = TJ = 25oC TJ = -55oC 150oC Figure 4. On-Resistance vs Gate to Source Voltage 1000 PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX IS, REVERSE DRAIN CURRENT (A) VGS = 0V 100 10 1 0.1 0.01 0.2 TJ = 150oC TJ = 25oC TJ = -55oC 1.5 2.0 2.5 3.0 3.5 VGS, GATE TO SOURCE VOLTAGE (V) 4.0 0.4 0.6 0.8 1.0 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 FDS8690 Rev. B www.fairchildsemi.com FDS8690 N-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted VGS, GATE TO SOURCE VOLTAGE(V) 10 8 6 4 2 0 VDD = 10V VDD = 15V 4000 Ciss CAPACITANCE (pF) 1000 Coss VDD = 20V 100 Crss f = 1MHz VGS = 0V 0 5 10 15 Qg, GATE CHARGE(nC) 20 10 0.1 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 30 Figure 7. Gate Charge Characteristics 40 IAS, AVALANCHE CURRENT(A) Figure 8. Capacitance vs Drain to Source Voltage 200 100 ID, DRAIN CURRENT (A) 10us 100us 10 10 1ms TJ = 25oC 1 10ms 100ms TJ = 125oC 0.1 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 1 -2 10 10 -1 10 10 10 tAV, TIME IN AVALANCHE(ms) 0 1 2 10 3 0.01 0.1 SINGLE PULSE TJ = MAX RATED TA = 25oC 1s DC 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 100 Figure 9. Unclamped Inductive Switching Capability 15 ID, DRAIN CURRENT (A) Figure 10. Forward Bias Safe Operating Area 10000 P(PK), PEAK TRANSIENT POWER (W) VGS = 10V VGS = 10V TA = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: I = I25 12 9 6 3 0 25 o 1000 100 150 - T A ----------------------125 VGS = 4.5V 10 SINGLE PULSE RJA = 50 C/W 50 75 100 125 TA, AMBIENT TEMPERATURE(oC) 150 1 -5 10 10 -4 10 -3 10 10 10 t, PULSE WIDTH (s) -2 -1 0 10 1 10 2 10 3 Figure 11. Maximum Continuous Drain Current vs Ambient Temperature Figure 12. Single Pulse Maximum Power Dissipation 4 FDS8690 Rev. B www.fairchildsemi.com FDS8690 N-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted 2 1 NORMALIZED THERMAL IMPEDANCE, ZJA DUTY CYCLE-DESCENDING ORDER 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.01 SINGLE PULSE t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA -2 -1 0 1E-3 -5 10 10 -4 10 -3 10 10 10 t, RECTANGULAR PULSE DURATION(s) 10 1 10 2 10 3 Figure 13. Transient Thermal Response Curve 5 FDS8690 Rev. B www.fairchildsemi.com TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FAST(R) ActiveArrayTM FASTrTM BottomlessTM FPSTM Build it NowTM FRFETTM CoolFETTM GlobalOptoisolatorTM CROSSVOLTTM GTOTM DOMETM HiSeCTM EcoSPARKTM I2CTM E2CMOSTM i-LoTM EnSignaTM ImpliedDisconnectTM FACTTM IntelliMAXTM FACT Quiet SeriesTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM DISCLAIMER ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM ScalarPumpTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) UniFETTM VCXTM WireTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I18 |
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